| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory together with its manufacturing method preventing the degradation of characteristic of a ferroelectric capacitor due to electric field from the side of a lower electrode, and to provide an electronic apparatus. SOLUTION: The method is used to manufacture a ferroelectric memory provided with a ferroelectric capacitor which is comprised of a lower electrode 12 formed on a substrate 10, a ferroelectric layer 14 formed as to cover the lower electrode 12, and an upper electrode formed on the ferroelectric layer 14. The lower electrode 12 is formed on the substrate 10, and an insulating material containing Si is formed on the side wall 12a of the lower electrode 12. A ferroelectric material (sol gel layer 14c) containing lead is provided so as to cover the lower electrode 12 and the insulating material (reaction layer 13b), and the ferroelectric material is heated for crystallization, so as to change it into the ferroelectric layer 14. At the same time, the insulating material is dispersed to form a void 13 between the side wall 12a of the lower electrode 12 and the ferroelectric layer 14. COPYRIGHT: (C)2006,JPO&NCIPI
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