发明名称 |
Method of manufacturing single crystal Si film |
摘要 |
Provided is a method of manufacturing a single crystal Si film. The method includes: preparing a Si substrate on which a first oxide layer is formed and an insulating substrate on which a second oxide layer is formed; forming a dividing layer at a predetermined depth from a surface of the Si substrate by implanting hydrogen ions from above the first oxide layer; bonding the insulating substrate to the Si substrate so that the first oxide layer contacts the second oxide layer; and forming a single crystal Si film having a predetermined thickness on the insulating substrate by cutting the dividing layer by irradiating a laser beam from above the insulating substrate. Therefore, a single crystal Si film having a predetermined thickness can be formed on an insulating substrate.
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申请公布号 |
US2006121691(A1) |
申请公布日期 |
2006.06.08 |
申请号 |
US20050071175 |
申请日期 |
2005.03.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NOGUCHI TAKASHI;XIANYU WENXU;YIN HUAXIANG |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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