发明名称 MASK, METHOD OF MANUFACTURING MASK, AND LITHOGRAPHIC PROCESS
摘要 A mask of a lithographic process, a method of manufacturing the mask and a lithographic process by using the mask are provided. The mask includes a substrate, a first polarization layer and a second polarization layer is provided. The first polarization layer for allowing a transmission of a first polarization direction of light and avoiding a transmission of a second polarization direction of light. The second polarization layer for avoiding a transmission of the first polarization direction of light, wherein the second polarization layer is patterned with a predetermined pattern.
申请公布号 US2006121360(A1) 申请公布日期 2006.06.08
申请号 US20040904924 申请日期 2004.12.06
申请人 WU TZONG-HSIEN 发明人 WU TZONG-HSIEN
分类号 G06F17/50;G03F1/00 主分类号 G06F17/50
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