摘要 |
A mask of a lithographic process, a method of manufacturing the mask and a lithographic process by using the mask are provided. The mask includes a substrate, a first polarization layer and a second polarization layer is provided. The first polarization layer for allowing a transmission of a first polarization direction of light and avoiding a transmission of a second polarization direction of light. The second polarization layer for avoiding a transmission of the first polarization direction of light, wherein the second polarization layer is patterned with a predetermined pattern.
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