发明名称 Fuse structure with charge protection circuit
摘要 A fuse structure for memory cell repair in a RAM device. The fuse structure includes a substrate, a fuse layer over an isolation region on the substrate, a charge protection circuit electrically connected to one side of the fuse layer, and two conductive layers overlying the substrate and electrically connected to the charge protection circuit and the other side of the fuse layer respectively.
申请公布号 US2006118904(A1) 申请公布日期 2006.06.08
申请号 US20040001056 申请日期 2004.12.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD. 发明人 LIAW JHON-JHY
分类号 H01L29/00 主分类号 H01L29/00
代理机构 代理人
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