发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A manufacturing method of a semiconductor device which can decrease the degradation of an element due to plasma in the LDD formation process is provided. The degradation of an element due to plasma is decreased by forming an element having an LDD structure according to a manufacturing method of a semiconductor device using a hard mask. Covering the substrate by an electrically conductive film allover, the density of electric charge accumulated in a gate electrode in the plasma process such as anisotropic etching can be reduced, and the degradation due, to plasma process can be reduced.
|
申请公布号 |
US2006118888(A1) |
申请公布日期 |
2006.06.08 |
申请号 |
US20060328257 |
申请日期 |
2006.01.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISIKAWA AKIRA |
分类号 |
H01L21/265;H01L29/76;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|