TOP COATING COMPOSITION FOR PHOTORESIST AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a top coating composition for a photoresist that can be used in a liquid immersion lithography process, and to provide a method for forming a photoresist pattern by a liquid immersion lithography process.

SOLUTION: The top coating composition comprises a polymer containing a carboxyl group or a sulfonic acid group, a base, and a solvent containing pure water. A top coating film consisting of the above top coating composition can be formed into an insoluble film which does not dissolve in water by using a TAG (thermal acid generator) or by a method of immersing water. By carrying out a liquid immersion lithography process using the insoluble top coating film thus obtained as a barrier, a photoresist component is protected from dissolving into an immersion medium during exposure through the immersion medium.

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