| 摘要 |
PROBLEM TO BE SOLVED: To decrease influences of a sector interface as a crystal defect. SOLUTION: A crystal growth device is provided to grow a crystal while dipping a seed crystal 7 into a source material solution 8 in a crucible 1 placed in a furnace 5 and pulling it therefrom, wherein the axial center of a pulling stem 6 with the seed crystal 7 mounted on the distal end is deviated from the axial center of the furnace 5 and from the axial center of the crucible 1. The lowest temperature point on the liquid surface of the source material solution may be shifted from the axial center of the furnace 5 and from the axial center of the pulling axis 6. COPYRIGHT: (C)2006,JPO&NCIPI
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