| 摘要 |
A semiconductor device includes: a semiconductor layer portion provided on an insulating layer, the semiconductor layer portion becoming an element formation region; a gate insulating layer provided on the semiconductor layer portion; a gate electrode provided on the gate insulating layer; and an impurity region provided in the semiconductor layer portion, the impurity region becoming a source or drain region. The semiconductor layer portion is provided with a recess and an isolation insulating layer formed by filling the recess with an insulating material.
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