发明名称 Testing method for dual in-line memory module, involves comparing data stored in address of memory, with expected data provided to hub of memory module
摘要 <p>The hub of memory module, converted into a transparent mode, by transparent mode transition circuit (230), is provided with data corresponding to address of memory (370). Expected data is provided to the hub of memory module. Another data stored in address of memory, is output to hub of memory module, and compared with expected data, by data comparison circuit (240). Independent claims are also included for the following: (1) hub of memory module; (2) data comparator of hub of memory module; (3) method of comparing data in hub of memory module; (4) memory module; and (5) semiconductor chip module.</p>
申请公布号 DE102005025216(A1) 申请公布日期 2006.06.08
申请号 DE20051025216 申请日期 2005.06.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, SEUNG-MAN;SO, BYUNG-SE;SEO, SEUNG-JIN;HAN, YOU-KEUN
分类号 G06F11/22;G11C29/00;G01R31/28;G06F11/00;G06F12/16;G11C29/08;G11C29/56 主分类号 G06F11/22
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