| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an integrated light emitting diode for remarkably reducing thermal resistance. <P>SOLUTION: After an n-type GaN layer 15, an active layer 16, and a p-type GaN layer 17 are sequentially formed on a substrate, and a circular p-side electrode 18 is formed on this p-type GaN layer 17; a fine light emitting diode in size of 20 μm or less is formed by etching the n-type GaN layer 15, active layer 16, and p-type GaN layer 17 using the p-side electrode 18 as the mask. Next, the conductive layer 21 of a semiconductor substrate 20 which is used as a heat sink is adhered on the p-side electrode 18 of such fine light emitting diode. Next, after separation of the substrate, an n-side electrode 22 formed of a transparent electrode is formed on the n-type GaN layer 15 of the fine light emitting diode. Thereafter, the semiconductor substrate 20 where the fine light emitting diode is formed is provided as a chip to obtain an integrated light emitting diode. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
