| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin film transistor that has good contact resistance as well as allows ohmic contact between a source electrode and a drain electrode and an organic semiconductor layer. SOLUTION: The organic thin film transistor includes the source electrode 21a, the drain electrode 21b, the organic semiconductor layer 26, a gate insulating layer 27, and a gate electrode 29 formed on a substrate, and a carrier relay layer including conductive polymer material formed between the source electrode and the drain electrode and the organic semiconductor layer. COPYRIGHT: (C)2006,JPO&NCIPI
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