发明名称 ION IMPLANTATION SYSTEM AND CONTROL METHOD
摘要 PROBLEM TO BE SOLVED: To provide an ion feeding source with high brightness and low emittance, an acceleration/deceleration moving system and an improved ion feeding source. SOLUTION: Ions are implanted, for example, by ionizing gas or vapor of dimer or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80, 175). The ion feeding source comprises the ionization chamber (80, 175) defining a surrounded space having a gas inlet to receive supplied gas and having the outlet aperture (46, 176) formed as a long and slim groove to discharge ions from the chamber (80, 175) as a ribbon-like beam having a long axis and a short axis; an electron supplying source to ionize the supplied gas from the chamber (80, 175) and generate electrons for forming molecular ions; and a reduction lens disposed near by the groove to accelerate the ribbon-like beam. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006147599(A) 申请公布日期 2006.06.08
申请号 JP20060054027 申请日期 2006.02.28
申请人 SEMEQUIP INC 发明人 HORSKY THOMAS N;COHEN BRIAN C;KRULL WADE A;SACCO JR GEORGE P
分类号 H01J27/20;H01J7/24;H01J37/08;H01J37/317;H01K1/62;H01L21/265 主分类号 H01J27/20
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