发明名称 REFRESH METHOD FOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a refresh method with little power consumption in the refreshing operation which can be applied to a semiconductor memory device using a piled refresh system. SOLUTION: In the refresh method for the memory device having N pieces of banks, the refresh operation is executed by the piled refresh system, in which the N pieces of the banks are sequentially refreshed, in a self refreshment mode when all the N pieces of the banks are refreshed. The refreshment operation is executed by a PASR system when an i (1≤i≤N-1) pieces of the banks is refreshed among the N pieces of the banks. The refresh operation is executed by the piled refresh system in an auto refresh mode. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006147123(A) 申请公布日期 2006.06.08
申请号 JP20050134894 申请日期 2005.05.06
申请人 HYNIX SEMICONDUCTOR INC 发明人 HUR HWANG;KIN TAIJUN
分类号 G11C11/406;G11C11/403 主分类号 G11C11/406
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