发明名称 Parallel compression test circuit of memory device
摘要 A parallel compression test circuit of a memory device disperses peak current and reduce noise by operating input/output amplifiers at different timings in a parallel compression test mode. The parallel compression test circuit comprises an input/output amplification control unit for activating a plurality of input/output amplifiers connected to a selected bank in a normal mode, and activating the plurality of input/output amplifiers in each bank at different timings in a test mode.
申请公布号 US2006123291(A1) 申请公布日期 2006.06.08
申请号 US20040008298 申请日期 2004.12.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM TAEK S.
分类号 G01R31/28 主分类号 G01R31/28
代理机构 代理人
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