发明名称 MEMBRANE-LIMITED SELECTIVE ELECTROPLATING OF A CONDUCTIVE SURFACE
摘要 This invention relates to processes and apparati for selectively electroplating a metal layer or layers into recessed topographic features on a conductive surface. The processes and apparati of the invention are useful for fabricating metal circuit patterns, for example for creating copper interconnects between integrated circuit elements embedded in a thin layer of dielectric material on the surface of a semiconductor wafer.
申请公布号 WO2006060520(A2) 申请公布日期 2006.06.08
申请号 WO2005US43387 申请日期 2005.11.11
申请人 E.I. DUPONT DE NEMOURS AND COMPANY;MAZUR, STEPHEN 发明人 MAZUR, STEPHEN
分类号 C25D7/12;H01L21/288;H01L21/768;H05K3/42 主分类号 C25D7/12
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