NITRIDE SEMICONDUCTOR ELEMENT MANUFACTURING METHOD AND NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor element which reduces pits caused by a high dislocation area of a substrate.

SOLUTION: A high dislocation area 15e is shown with dots on the main surface 15a of a gallium nitride substrate 15. A gallium nitride film 17 is deposited on the gallium nitride substrate 15 at the growing rate of 3 micrometers/hr or higher. Pits 21 are formed in the surface 17a of the GaN film 17 at pit surface density D(P). The growth of the gallium nitride film reduces the surface density of the pit 21 or 23 formed due to the high dislocation area 15e appearing on the surface 15a of the gallium nitride substrate 15, resulting in that the pitch surface density D(P) is reduced as small as 0<(D(P)/D(H))<0.8. Each pit 21 is composed of a plurality of facets (not shown) corresponding to the high dislocation area 15e on the main surface 15a of the GaN substrate 15.

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