| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high performance capacitor insulating film excellent in specific dielectric constant, heat resistance, and current leaking characteristics by adsorbing a silicon atom layer, an oxygen atom layer, and a metal atom layer or the like using an atom layer deposition method to form a metal silicate layer and nitriding and oxidizing the silicate layer. <P>SOLUTION: The manufacturing method of a thin film using the atom layer deposition method comprises a film formation process S2 in which there are performed at least one time or more both of a process ("Si-O cycle" S20) where a silicon atom layer is formed and an oxygen atom layer is formed on the silicon atom layer, and a process ("metal-O cycle" S30) where a metal atom layer is formed and an oxygen atom layer is formed on the metal atom layer; a nitrogen supply process S3 of supplying gas containing nitrogen to the metal silicate layer formed in the film formation process S2; and an oxygen supply process S4 of supplying gas containing oxygen to the metal silicate layer formed in the film formation process. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
