发明名称 SURFACE ACOUSTIC WAVE DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a means for substantially equalizing the frequency temperature characteristics of an SH type surface acoustic device to those of a surface acoustic device employing a Rayleigh wave. SOLUTION: At least one IDT electrode of an alloy principally comprising aluminum is arranged on a crystal substrate of Euler angle (0°, 110°-150°, 90°±2°) and an SiO<SB>2</SB>film is stuck to cover the IDT electrode thus obtaining an SH type surface acoustic device. The SH type surface acoustic device is constituted by setting the standardized thickness of the SiO<SB>2</SB>film in the range of 1.7%-3.0%. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006148279(A) 申请公布日期 2006.06.08
申请号 JP20040332707 申请日期 2004.11.17
申请人 EPSON TOYOCOM CORP 发明人 YAMADA AKINORI
分类号 H03H9/145;H03H9/25 主分类号 H03H9/145
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