| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing residues containing a polymer resist and a metal oxide from a metal structure on a semiconductor substrate, in the semiconductor substrate on which metal wiring is formed. SOLUTION: The method includes a heating step (a) of heating the substrate having the metal structure under the presence of nitrogen (N<SB>2</SB>), a stabilizing step (b) of stabilizing under the presence of pure nitrogen (N<SB>2</SB>), a passivating step (c) of passivating by using a plasma containing at least one of water, nitrogen and oxygen, and an exfoliating step (d) using oxygen to remove the residue containing the resist. COPYRIGHT: (C)2006,JPO&NCIPI
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