| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which is easily manufactured and improves operational reliability. SOLUTION: A cell transistor 11 comprises a p-type silicon substrate, a control gate CG, and a pair of floating gates FG1 and FG2 that are isolated electrically. On the silicon substrate, a band-like projected part 13 extending in the direction of columns is formed, and a pair of band-like n-type diffusion regions 14a and 14b functioning as a source or a drain are formed on a top layer in such a manner as to pinch the projected part 13. The control gate CG is formed via an insulating film on the projected part 13 and the floating gates FG1 and FG2, and extends in the direction of rows like a band. A width W1 of the floating gates FG1 and FG2 with respect to the direction of columns is wider than a width W2 of the control gate CG. The floating gates FG1 and FG2 and the control gate CG can be easily formed without using a self-align process, with a technical problem, in the direction of columns. COPYRIGHT: (C)2006,JPO&NCIPI
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