| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high quality semiconductor device, wherein quality deterioration due to the impurity contained in the gate electrode is suppressed, and also to obtain a manufacturing method thereof. SOLUTION: This semiconductor device comprises: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate; and the gate electrode formed by laminating a plurality of semiconductor films having the impurity introduced into them and formed on the gate insulating film. In the gate electrode, the impurity concentration profile of the impurity has a steep peak in each layer in the plurality of semiconductor films, and the impurity density in the lowermost semiconductor film formed on the insulating film in the vicinity thereof is made smaller than that in the other semiconductor film. COPYRIGHT: (C)2006,JPO&NCIPI
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