发明名称 VARIABLE CAPACITANCE ELEMENT AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To easily form a variable capacitance element provided with a movable portion, which is an MEMS element, in a sealed state. SOLUTION: This variable capacitance element is provided on a semiconductor substrate 101 formed of silicon etc. via an insulating layer 102, and comprises a fixed electrode 103, a plate-like movable electrode 104 disposed above the fixed electrode 103 oppositely thereto and apart therefrom by a predetermined distance, a plurality of spring beams 105 whose one-side ends are connected to the movable electrode 104, and a plurality of anchors 106 formed on the insulating layer 102 around the fixed electrode 103. Further, a side wall frame 110 is formed in a form to surround the periphery of the variable capacitance element, and a ceiling wall 111 is formed on the side wall frame 110. A package surrounding the variable capacitance element is formed of the side wall frame 110 and the ceiling wall 111. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006147995(A) 申请公布日期 2006.06.08
申请号 JP20040338807 申请日期 2004.11.24
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KODATE JUNICHI;MACHIDA KATSUYUKI;URANO MASAMI;KUWABARA HIROSHI;TERADA JUN
分类号 H01G5/18;B81B3/00;B81C1/00;H01L21/822;H01L27/04 主分类号 H01G5/18
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