| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus having a high sensitivity and little after-image, and to provide its manufacturing method. SOLUTION: When light is incident into a photoelectric conversion film 21, paired electron-holes are created and the holes move to the side of a transparent electrode 22 while the electrons are accumulated in an accumulation diode 13 via a pixel electrode 20. At this point, since there is no recombination center nor a trap level inside the crystalline photoelectric conversion film 21, the reduction in photoelectric current due to the absorption of the electrons created by photoelectric conversion by a recombination center or a trap level and the occurrence of after-image due to the emission of the carrier from the trap level can be suppressed. COPYRIGHT: (C)2006,JPO&NCIPI
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