| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor semiconductor device which can prevent the thermal runaway of a transistor without using a ballast resistor. SOLUTION: The transistor Tr1 of an amplifier circuit 10 and diodes D1 and D2 of a bias circuit 20 are all arranged on one and the same semiconductor substrate, and covered with heat conduction wiring 30 formed of a metal material, etc. having good heat conduction. A rise in temperature which occurs in the transistor Tr1 can be rapidly transmitted to the diodes D1 and D2 by means of the heat conduction wiring 30. Since the diodes D1 and D2 operate in the direction of decreasing the temperature of the transistor Tr1, the thermal runaway of the transistor Tr1 can be prevented. COPYRIGHT: (C)2006,JPO&NCIPI
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