发明名称 THIN FILM TRANSISTOR DISPLAY PANEL THAT UTILIZES SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic semiconductor thin film transistor display panel including a signal line having stable contact properties and electrical properties. SOLUTION: First, a gate line is formed on an insulating substrate and a gate insulating film made of an organic insulating material that covers the gate line is formed. Next, an ITO film in an amorphous state at normal temperatures is stacked on the gate insulating film and a data line and a drain electrode are formed by patterning in a wet etching process that utilizes a photosensitive film pattern. At this time, a chromium etchant is used as an etchant. Next, after the photosensitive film pattern is removed, an annealing process is performed and the ITO film in an amorphous state is quasi-crystallized. Next, after an organic semiconductor is formed, a protective film having a contact hole for exposing the drain electrode is formed and a pixel electrode to be coupled to the drain electrode via the contact hole is formed. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006148114(A) 申请公布日期 2006.06.08
申请号 JP20050332181 申请日期 2005.11.16
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RYU MIN-SEONG;SEO JONG-HYUN;HONG MUN-PYO
分类号 H01L29/786;H01L21/28;H01L21/336;H01L29/417;H01L51/05;H01L51/30 主分类号 H01L29/786
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