Gate drive circuit for semiconductor device

摘要

A gate drive circuit is capable of stabilizing gate drive voltage for a semiconductor device. A voltage build-up power supply circuit is disposed for connection between a battery and a power supply terminal of a gate drive IC. When lowering voltage of the battery, the voltage build-up power supply circuit build up the voltage up to a set value and supplies the gate drive IC side with an output voltage, thus enabling a gate drive voltage to be supplied with a stable voltage. The gate drive circuit further includes a first diode disposed for connection between the voltage build-up power supply circuit and the power supply terminal disposed on the gate drive IC side and a second diode disposed for connection between the battery and the power supply terminal disposed on the gate drive IC side.