发明名称 |
SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY |
摘要 |
<p>In one embodiment, a method for epitaxially forming a silicon-containing material on a substrate surface is provided which includes positioning a substrate having a monocrystalline surface and a second surface (amorphous or polycrystalline) into a process chamber and exposing the substrate to a deposition gas to form an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source or both. Thereafter, the method further provides exposing the substrate to an etchant gas such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The substrate may be sequentially and repetitively exposed to the deposition and etchant gases to form the silicon-containing material. In one example, the deposition gas contains silane and etchant gas contains chlorine and nitrogen.</p> |
申请公布号 |
WO2006060339(A2) |
申请公布日期 |
2006.06.08 |
申请号 |
WO2005US42991 |
申请日期 |
2005.11.28 |
申请人 |
APPLIED MATERIALS, INC.;KIM, YIHWAN;SAMOILOV, ARKADII, V. |
发明人 |
KIM, YIHWAN;SAMOILOV, ARKADII, V. |
分类号 |
H01L21/84;H01L21/336 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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