| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a body floating effect, and a manufacturing method therefor. <P>SOLUTION: The semiconductor device is of an SOI structure comprising a silicon substrate 1, a buried insulating layer 2 formed on the silicon substrate 1, and a semiconductor layer 3 formed on the buried insulating layer 2. The semiconductor layer 3 has a first conductivity type body region 4, a second conductivity type source region 5, and a second conductivity type drain region 6. A gate electrode 8 is formed on the body region 4 between the source region 5 and the drain region 6 via a gate oxide film 7. The source region 5 comprises a second conductivity type extension layer 52, and a silicide layer 51 that contacts the extension layer 52 at a side thereof, and a crystal defect region 12 is formed on a depletion layer region generated in a boundary part between the silicide layer 51 and the body region 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
