| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin semiconductor device and its manufacturing method. <P>SOLUTION: The semiconductor device has a semiconductor chip 2 having a plurality of electrodes on a first surface 2a, electrically independent electrode plates 5 connected to overlie on the respective electrodes for causing their first surfaces to face the first surface of the semiconductor chip, and an insulator 4 filling a gap between the electrode plates and a gap between the electrode plate and the semiconductor chip. The semiconductor chip, the insulator and the electrode plates form a hexahedron. The upper surface of the hexahedron is formed of the second surface 2b of the semiconductor chip. Respective side faces of the semiconductor chip are exposed on respective side faces of the hexahedron, and a second surface 5b opposite to the first surface of each electrode plate is exposed on a lower surface of the hexahedron. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
