| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a substrate with a built-in element which enables high density packaging and is excellent in electrical properties, and to provide its manufacturing method. <P>SOLUTION: A WCSP semiconductor device 101 having a conductor 120 disposed and formed inside a via hole passing through from an element formation surface to a rear is built in a substrate 100 with a built-in element. Since an electric signal can be output from either the element formation surface or the rear of the WCSP semiconductor device 101, it is possible to install wiring at the built-in WCSP semiconductor device 101, semiconductor devices 110, 111 mounted on the surface of the substrate 100 with a built-in element, and a chip component 112 in a shortest distance, thus realizing excellent electrical properties such as rapid transmission. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
