METHOD AND APPARATUS FOR GROWING SILICON SINGLE CRYSTAL AND SILICON WAFER MANUFACTURED FROM THE SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide technology for manufacturing a high quality silicon single crystal at a high growth speed. SOLUTION: In a method for growing the silicon single crystal by a Czochralski method, the silicon single crystal is grown under such a condition that the temperature gradient of a silicon melt along the axis parallel to the radial direction of the single crystal satisfies formula (1), whereinΔTmax is the maximum value of the temperature gradient; andΔTmin is the minimum value of the temperature gradient. COPYRIGHT: (C)2006,JPO&NCIPI