发明名称 SEMICONDUCTOR APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve the heat radiation of a semiconductor apparatus, and make it hard to transmit the heat generated by a device to a specific circuit. SOLUTION: A semiconductor apparatus is provided with a first device isolation insulating film 41 and a second device isolation insulating film 42 with the thermal conductivity lower than that of the first device isolation insulating film. Between an MOS transistor T1 and an MOS transistor T2, to which heat transfer should be suppressed, the second device isolation insulating film 42 with low thermal conductivity is arranged. Between the devices other than them, the first device isolation insulating film 41 is arranged. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006148049(A) 申请公布日期 2006.06.08
申请号 JP20050183263 申请日期 2005.06.23
申请人 RENESAS TECHNOLOGY CORP 发明人 KOMATSU HIROSHI;IWAMATSU TOSHIAKI
分类号 H01L27/04;H01L21/3205;H01L21/76;H01L21/762;H01L21/822;H01L23/52;H01L27/08;H01L29/78;H01L29/786 主分类号 H01L27/04
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