| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a gate insulating film which has a high-dielectric constant, traps carriers little, and is very reliable; and to provide its manufacturing method. SOLUTION: The semiconductor device is equipped with the gate insulating film formed of a high-dielectric film provided on a semiconductor substrate through an insulating film for use in nucleation, and the above insulating film and/or the high-dielectric film is formed of a film subjected to a treatment carried out in supercritical dioxide carbon. The method of manufacturing the semiconductor device equipped with the gate insulating film formed of high-dielectric material comprises processes of forming the insulating film used for nucleation on the semiconductor substrate, forming the high-dielectric film on the insulating film, and processing the insulating film and/or the high-dielectric film in supercritical carbon dioxide. COPYRIGHT: (C)2006,JPO&NCIPI
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