| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus which is reduced in device cell pitch with its withstand voltage characteristics kept high and has a low ON-state resistance. SOLUTION: A p<SP>++</SP>-type source region 40 much higher in impurity concentration than a p-type semiconductor substrate 10 is provided on the surface of the p-type semiconductor substrate 10 so as to bring, at least, a part of its side face into contact with an n<SP>-</SP>-type extended drain region 20. A gate electrode 70 is formed on the n<SP>-</SP>-type extended drain region 20 through the intermediary of a gate insulating film 65, and covers the end of the p<SP>++</SP>-type source region 40 and its vicinity. When the semiconductor apparatus is put in an ON-state wherein a prescribed voltage is applied to the gate electrode 70, a degenerate region appears on the surface of the n<SP>-</SP>-type extended drain region 20 under the gate electrode 70, and a tunnel current flows through a border between a drain electrode 50 and a source electrode 80. COPYRIGHT: (C)2006,JPO&NCIPI
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