| 摘要 |
A method of forming a polysilicon resistor includes: providing a substrate, the substrate comprising a dielectric layer; forming a polysilicon layer on the dielectric layer; doping the entire polysilicon layer evenly with first type dopants; doping said polysilicon layer containing the first type dopants with second type dopants; defining a polysilicon resistor pattern on the polysilicon layer and removing the polysilicon layer and the dielectric layer outside the polysilicon resistor pattern down to the surface of the substrate, the remainder of the polysilicon layer comprising at least a high resistance region and a low resistance region; and forming a salicide layer on the remainder of the polysilicon layer within the low resistance region.
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