Method of manufacturing a semiconductor device and method of manufacturing a thin layer using the same

摘要

A method includes providing a first distance between an inlet of a line and a chuck for supporting a substrate. A first material is applied to the substrate on the chuck through the line to process the substrate. A second distance is provided between the inlet of the line and the chuck. Byproducts generated during processing of the substrate are then removed using a second material. Here, the second material has reactivity with respect to the chuck having the second distance from the inlet smaller than that of the second material with respect to the chuck having the first distance from the inlet. A distance between the chuck and the inlet of the line is adequately adjusted in the process using the plasma gas so that the substrate on the chuck may not be moved.