Electronic nano-component, with a tunnel structure, is in an integrated multi-layer assembly on a substrate with vertical nano-passage holes for the nano-electrodes

摘要

The electronic nano-component (NB), with a tunnel structure, is in an integrated multi-layer assembly (MSA) on a substrate (S) with an insulation base layer (IGS). Each vertical nano-passage hole (NL) for the nano-electrodes (NE) has a maximum angle of +-1 greater than 0 to +-3[deg] to the vertical. Alternating insulation layers (IS) and further conductor layers (LS) are on the base insulation layer, which form conductive (LNP) and insulating (INP) nano-particle disks, offset vertically by the thickness (D) of the base insulating layer. The insulating particles act as tunnel barriers (TB). The combined substrate and base insulating layer is a porous aluminum oxide on an aluminum substrate, a porous polymer film on a very smooth substrate, or a layer of silicon oxide or silicon oxynitride on a silicon substrate.