发明名称 |
Semiconductor component has crack forming structure between substrate and passivation layer to promote cracks at defined positions under mechanical stress |
摘要 |
<p>Semiconductor component comprises a passivation layer (6) over a semiconductor body (1) with a crack-forming structure (10,11) between them that encourages formation of cracks at defined positions (14) within the passivation layer when mechanical stresses arise within the layer.</p> |
申请公布号 |
DE102004057238(A1) |
申请公布日期 |
2006.06.08 |
申请号 |
DE20041057238 |
申请日期 |
2004.11.26 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GOELLNER, REINHARD;HARTNER, WALTER;BUSCH, JOERG |
分类号 |
H01L23/28;H01L23/52 |
主分类号 |
H01L23/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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