发明名称 Semiconductor component has crack forming structure between substrate and passivation layer to promote cracks at defined positions under mechanical stress
摘要 <p>Semiconductor component comprises a passivation layer (6) over a semiconductor body (1) with a crack-forming structure (10,11) between them that encourages formation of cracks at defined positions (14) within the passivation layer when mechanical stresses arise within the layer.</p>
申请公布号 DE102004057238(A1) 申请公布日期 2006.06.08
申请号 DE20041057238 申请日期 2004.11.26
申请人 INFINEON TECHNOLOGIES AG 发明人 GOELLNER, REINHARD;HARTNER, WALTER;BUSCH, JOERG
分类号 H01L23/28;H01L23/52 主分类号 H01L23/28
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