| 摘要 |
In at least some embodiments, the present invention is a plasma etching method which includes applying a gas mixture comprising CF 4 , N 2 and Ar and forming a high density and low bombardment energy plasma. The high density and low bombardment energy plasma is formed by using high source and low bias power settings. The gas mixture can further include H 2 , NH 3 , a hydrofluorocarbon gas and/or a fluorocarbon gas. The hydrofluorocarbon gas can include CH 2 F 2 , CH 3 F; and/or CHF 3 . The fluorocarbon gas can include C 4 F 8 , C 4 F 6 and/or C 5 F 8 .
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