发明名称 Active matrix display device
摘要 <p>There is provided an electronic device in which the deterioration of the device is prevented and an aperture ratio is improved without using a black mask and without increasing the number of masks. In the electronic device, a first electrode (113) is disposed on another layer different from the layer on which a gate wiring (145) is disposed as a gate electrode, and a semiconductor layer of a pixel switching TFT is superimposed on the gate wiring (145) so as to be shielded from a light. Thus, the deterioration of the TFT is suppressed, and a high aperture ratio is realized.</p>
申请公布号 EP1128439(A3) 申请公布日期 2006.06.07
申请号 EP20010104894 申请日期 2001.02.28
申请人 SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;KOYAMA, JUN;INUKAI, KAZUTAKA
分类号 H01L27/00;H01L31/12;G09G3/30;G09G3/32;H01L27/32;H01L29/786;H05B33/10 主分类号 H01L27/00
代理机构 代理人
主权项
地址