Semi conductor integrated circuit including anti-fuse and method for manufacturing the same

摘要

An anti-fuse (48) is manufactured by forming an isolation region (3) including an insulating material layer (31) buried in a surface of a device formation region (2) on a surface of a semiconductor substrate (1), and by forming diffusion regions (6) at both sides of the isolation region, then by contacting electrodes to the respective diffusion regions. The anti-fuse is initially in a non-conductive state, and is programmed to be in a permanently conductive state by a simple writing circuit.