| 摘要 |
Each semiconductor radiation detector (21) used for a nuclear medicine diagnostic apparatus (PET apparatus) (1) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with ³-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates (20) (20a, 20b) in such a way that the distance (distance of conductor) between the semiconductor radiation detector (21) and an analog ASIC which processes the signal detected by this detector (21) is shortened. Furthermore, the substrates (20) (20a, 20b) on which the detectors (21) are mounted are housed in a housing (30) as a unit (detector unit 2).
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