| 摘要 |
Resist composition comprises: (A) polymer based on a hydroxystyrene derivative monomer, a styrene derivative monomer and a (meth)acrylate monomer; (B) triphenyl-sulfonium benzene-sulfonate compound which forms an acid on irradiation of radiation; (C) an organic basic compound; and (D) a solvent. Resist composition comprises: (A) polymer based on a hydroxystyrene derivative monomer, a styrene derivative monomer and a (meth)acrylate monomer; (B) triphenyl-sulfonium benzene-sulfonate compound which forms an acid on irradiation of radiation; (C) an organic basic compound; and (D) a solvent. (A) comprises a monomer of formula (I), a monomer of formula (II) and a monomer of formula (III). (B) comprises a compound of formula (IV). [Image] [Image] R 1H or methyl group; R 2H or 1-4C optionally branched alkyl group; R 3an acid unstable group which easily dissociates using an acid and ester bonds with a carboxylic acid; R 5and R 7H or electron withdrawing group (both are not H); R 4, R 6and R 8H or halogen; R 9and R 10H, halogen, 1-4C optionally branched alkyl group, 1-4C optionally branched alkoxy group, 2-5C optionally branched alkoxycarbonyl group, or 4-5C cyclic acetal group; n : an integer of 1-3. |
