| 摘要 |
1,156,615. Doping semi-conductor material. CORNING GLASS WORKS. 16 Feb., 1967 [23 Feb., 1966], No. 7492/67. Heading H1K. A plurality of receptacles 50 for semiconductor material are passed in sequence through an elongate heating zone such as the tubular furnace core 13, the arrangement being such that the content of each receptacle is isolated from the contents of the neighbouring receptacles. As shown this is achieved by fitting a D-shaped bottom liner 15 in the furnace core and making the receptacles consist of a tray protion 51, Fig. 4, and a barrier wall portion 52 which fits the space between the liner 15 and the core 13. Alternatively, the liner 15 may be omitted and the receptacles consist of a D-shaped base with a circular barrier wall at one end (Fig. 5, not shown). The apparatus is used to dope the contents of the receptacles, a series of heaters surrounding the core ensuring that the temperature in it increases from each end toward the centre, so that the contents of the receptacles are gradually heated and then gradually cooled as they pass through. Conduits 30 to 34 supply a suitable atmosphere to the various regions of the heating zone. The atmosphere is inert as supplied by conduits 30, 31, 33, 34 to the input and output ends of the path of motion of the receptacles through the furnace and is a doping atmosphere (containing e.g. POCl 3 ) at the maximum temperature region fed by conduit 32.
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