Semiconductor optoelectronic device

摘要

A semiconductor optoelectronic device has an upper and a lower optical confinement layers provided between an active layer and upper waveguide layer, and between the active layer and lower waveguide layer respectively. The energy gap between the optical confinement layers is smaller than that of the waveguide layers but greater than that of the active layer. An electron blocking layer is interposed between the upper waveguide layer and the upper optical confinement layer. The optical confinement layer is a nitride-based material and is doped with silicon or magnesium. The thickness of the optical confinement layer is more than 100 (preferably 100 - 500) A[deg].