发明名称 |
ITO THIN FILM AND METHOD FOR PRODUCING SAME |
摘要 |
A novel thin ITO film formed on a substrate and containing Sn at a concentration of 0.6 to 2.8 atomic %. The thin ITO film can be used as a transparent electrically conducting film. A method of producing the thin ITO film includes a step of spraying a mixed solution of an indium salt and a tin salt onto a substrate left in the atmosphere. A stannous chloride is used as the tin salt and an alcohol solution is used as the solution. The thin ITO film of a low Sn concentration (0.6, 1.3 or 2.8 atomic %) exhibits a markedly decreased absorption coefficient in a long wavelength region (» ‰’ 500 to 1000 nm). The thin ITO film realizes a low resistivity (about 1.7 x 10 -4 ©·cm).
|
申请公布号 |
EP1666418(A1) |
申请公布日期 |
2006.06.07 |
申请号 |
EP20040772664 |
申请日期 |
2004.08.26 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
FUJITA, YASUHIKO |
分类号 |
C03C17/25;C01G19/00;(IPC1-7):C01G15/00;H01B5/14;H01B13/00 |
主分类号 |
C03C17/25 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|