| 摘要 |
A mask is configured for projecting a structure pattern onto a semiconductor substrate in an exposure unit. The exposure unit has a minimum resolution limit for projecting the structure pattern onto the semiconductor substrate. The mask has a substrate, at least one raised first structure element on the substrate which has a lateral extent which is at least the minimum lateral extent that can be attained by the exposure unit, a configuration second raised structure elements which are arranged in an area surrounding the at least one first structure element on the substrate in the form of a matrix with a row spacing and a column spacing, whose shape and size are essentially identical to one another, and which have a respective lateral extent that is less than the minimum resolution limit of the exposure unit.
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