发明名称 Semiconductor component, particularly a micromechanical pressure sensor
摘要 A semiconductor component, in particular a micromechanical pressure sensor based on silicon, having a base layer, an at least largely self-supporting diaphragm and an overlayer situated on the diaphragm, the diaphragm and the base layer, at least from place to place, delimiting a void. Furthermore, at least from place to place, above the diaphragm a conducting region is provided in the overlayer which is electrically poorly conductive as compared to the conducting region, to which the surface of the diaphragm that faces the overlayer is able to be electrically contacted.
申请公布号 US7057248(B2) 申请公布日期 2006.06.06
申请号 US20020292865 申请日期 2002.11.08
申请人 ROBERT BOSCH GMBH 发明人 SAUTTER HELMUT;SCHATZ FRANK;GRAF JUERGEN;ARTMANN HANS;GOMEZ UDO-MARTIN;KEHR KERSTEN
分类号 H01L29/82;G01L27/00;H01L29/00;H01L29/74;H01L31/111 主分类号 H01L29/82
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