| 发明名称 |
PMOS based LVTSCR and IGBT-like structure |
| 摘要 |
In an ESD protection device making use of a LVTSCR-like structure or an IGBT-like structure, negative polarity over-voltage protection is achieved by providing a LVTSCR-like structure or IGBT-like structure that defines a PMOS device.
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| 申请公布号 |
US7057215(B1) |
申请公布日期 |
2006.06.06 |
| 申请号 |
US20020210948 |
申请日期 |
2002.08.02 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VASHCHENKO VLADISLAV;CONCANNON ANN;HOPPER PETER J.;TER BEEK MARCEL |
| 分类号 |
H01L29/74;H01L31/111 |
主分类号 |
H01L29/74 |
| 代理机构 |
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