| 摘要 |
A mask design for use in sequential lateral solidification processing is provided comprising a first array of beamlet and a second array of beamlets, which is parallel to the first, for accomplishing a first 2-shot process, and a third array of beamlets and forth array of beamlets, both at at an angle, for example 90 degrees, relative to the first and second array of beamlets for accomplishing a second 2-shot process without the need to rotate the mask. A method of using the mask to accomplish a 2N crystallization process.
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